| PART |
Description |
Maker |
| IRF7403 IRF7403TRPBF |
Generation V Technology
Power MOSFET
|
IRF[International Rectifier]
|
| IRF7389PBF IRF7389TRPBF IRF7389PBF-15 |
HEXFET Power MOSFET
Generation V Technology
|
IRF
International Rectifier
|
| IRLML2803TRPBF |
Generation V Technology, Ultra Low On-Resistance
|
International Rectifier
|
| IRF7501PBF IRF7501TRPBF IRF7501PBF-15 |
Generation V Technology Ulrtra Low On-Resistance
|
International Rectifier
|
| IRF7343PBF IRF7343TRPBF |
generation v technology
HEXFET Power MOSFET
|
International Rectifier
|
| NPT2021 NPT2022 NPT2024 NPA1006 |
Next generation high power RF semiconductor technology
|
M/A-COM Technology Solu...
|
| KRF7301 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
| IRF7503 IRF7503TR |
Generation V Technology
Power MOSFET(Vdss=30V, Rds(on)=0.135ohm)
|
International Rectifier
|
| SGB02N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW15N60 SGP15N60 SGP15N6008 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW30N60HS |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
